header_image

On the Modeling of Undoped Double-Gate MOSFET

Dr. Adelmo Ortiz-Conde
Wednesday, April 11, 2007
12:00PM ~ 1:30PM, Harris Center 101

Abstract


We review classical physics based compact models of undoped double-gate SOI MOSFETs. The use of multiple-gate has emerged as a new technology to possibly replace the conventional planar MOSFET when its feature size is scaled to the sub-50 nm regime. MOSFET technology has been the choice for mainstream digital circuits for VLSI as well as for other high frequency applications in the low-GHz range. But the continuing scaling of MOSFET presents many challenges, and multiple-gate, particularly double-gate, SOI devices seem to be attractive alternatives as they can effectively reduce the short-channel effects and yield higher current drive.

The existing double-gate SOI MOSFET core compact models under review, which are in general developed based on the Pao-Sah formulation for the bulk MOSFET, define the drain current in terms of one of the following three different variables: surface potential, inversion charge, and auxiliary variables. Numerical simulations are included in order to assess the validity of the models reviewed.

Short Bio


Adelmo Ortiz-Conde (S'82, M'85, SM'97) was born in Caracas, Venezuela, on November 28, 1956. He received the B.S. degree in Electronics from the Universidad Simón Bolívar, Caracas, in 1979 and the M.E. and Ph.D. from the University of Florida, Gainesville, in 1982 and 1985, respectively.

From 1979 to 1980, he served as an instructor in the Department of Electronics at the Universidad Simón Bolívar. In 1985, he joined the technical Staff of Bell Laboratories, Reading, PA, where he was engaged in the development of high voltage integrated circuits. Since 1987 he has been with the Department of Electronics at the Universidad Simón Bolívar and he was promoted to Full Professor in 1995. He was on sabbatical leave at the Florida International University, Miami, from September to December 1993, and at the University of Central Florida (UCF), Orlando, from January to August 1994, and again from July to December 1998, and at CINVESTAV, Mexico City, Mexico, from October 2000 to February 2001.

He has authored one textbook, Analysis and Design of MOSFETs: Modeling, Simulation and Parameter Extraction (Boston, MA: Kluwer, 1998), 74 refereed journal articles (including 4 invited review articles) and 59 papers (including 8 invited papers) in international conference proceedings. His present research interest includes the modeling and parameter extraction of semiconductor devices.

Dr. Ortiz-Conde is Member of Eta Kappa Nu, Tau Beta Pi, Phi Kappa Phi and the Galilean Society. He is an EDS Distinguished Lecturer and he is the Chair of IEEE's CAS/ED/PE Venezuelan Chapter. He was the Editor for Region 9 of the IEEE EDS Newsletter from 2000 to 2005. He is a Member of the Editorial Advisory Board of Microelectronics and Reliability. He was in the Engineering and Applied Sciences Commission of the National System for the Promotion of Research. He has served as Reviewer for national and international journals and conferences. He was the General Chairperson of the first IEEE International Caracas Conference on Devices, Circuits, and Systems in 1995, the Technical Chairperson of the second, fourth and fifth editions of this conference in 1998, 2002 and 2004 respectively, and the Chairperson of the Steering Committee in 2000.

Presented by ED/CPMT Chapters of IEEE Orlando Section, IEEE Student chapters of UCF

FEEDBACK | Webmaster | EECS | FSI | CECS | UCF
University Of Central Florida | Orlando, Florida 32816-2362 Phone: 407-823-2341